www.galaxycn.com bl bl galaxy electrical document number 0268002 1. features silicon epitaxial planar diode high speed switching diode 500 mw power dissipation weight: 0.004 ounces, 0.13 grams maximum ratings and electrical characteristics ratings at 25 ambient temperature unless otherwise speci f ied. maximum ratings units rev er s e v oltage v r v peak reverse voltage v rm v average forw ard rectif ied current half w ave rectif ication w ith resistive load @ t a = 25 and f 50hz forw ard surge current @ t<1s and t j = 25 i fsm ma pow er dissipation @ t a = 25 p tot mw junction temperature t j storage temperature range t stg electrical characteristics units forw ard voltage @ i f =10ma v f v leakage current @ v r =50v i r na @ v r =20v t j =150 i r a capacitance @ v f =v r =0v c j pf reverse breakdow n voltage tested w ith 5 a pulses reverse recovery time from i f =10ma to i r =10ma to i r =1ma ns from i f =10ma to i r =1ma, v r =6v. r l =100 . ns thermal resistance junction to ambient r ja k/w rectif ication ef f iciency @ 100mhz,v rf =2v v - galaxy electrical t rr - - min typ 150 1) 175 -55 --- +175 1)valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature. 4 2 v (br)r 75.0 - - 0.45 - - 350 1) max 2 - - - - i av 500.0 500 1) ma - -1.0 - 1N4151 mechanical data small signal switching diode case: do-35,glass case reverse voltage : 50 v current: 0.15 a polarity: color band denotes cathode do-35(glass) 1)valid prov ided that leads at a distance of 8 mm f rom case are kept at ambient temperature. - 50.0 50.0 v 1N4151 50.0 75.0
10s 1 10 100 v=tp/t 0.1 a -1 10 i frm tp -2 10 -3 10 -5 10 n=0 0.1 0.2 0.5 t=1/fp tp i frm t -4 10 1 t j =100 t j =25 -2 10 -1 10 1 10 3 10 ma i f v f 2 10 01 2v 200 400 600 800 0 100 200 ?? 1000 100 300 700 500 900 0 mw p tot t a bl galaxy electrical www.galaxycn.com document number 0268002 2. fig.1 -- admissible power dissipation nnnnnn versus ambi ent temperature fi g.2 -- forward characteri sti cs ratings and characteristic curves 1N4151 fi g.3 -- admi ssi ble repeti ti ve peak forward current versus pulse durati on
v o 5k 2nf v rf =2v d.u.t. 60 bl galaxy electrical www.galaxycn.com document number 0268002 3. 1.1 1.0 0.8 0.9 0.7 02468 1 0 v t j =25 f=1mhz ctot(ov) v r ctot(v r ) 0 200?? 10 1 na 3 10 2 10 4 10 v r =50v 100 10 t j =25 ?? f=1mhz ma 1 -1 10 -2 10 r f i f 10 1 2 10 2 10 3 10 4 10 fi g. 4 -- recti fi cati on effi ci ency jjjjjjjj measurement circui t fi g. 5 -- relati ve capaci tance versus jjjjjjjjjjjjjj voltage ratings and characteristic curves 1N4151 fig. 6 -- leakage current versus juncti on temperature ff fi g. 7 -- dynami c forward resi stance fff versus forward current
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